| PART |
Description |
Maker |
| KSE700 KSE703 KSE701 KSE702 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJE803 MJE801 MJE802 MJE800 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP107 TIP105 TIP106 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP147 TIP145 TIP146 TIP147TU TIP146TU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP101 TIP100 TIP102 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP112F |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| 1N965 JANTX1N957B-1 1N960 1N985 1N963 1N967 JANTXV |
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 24 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 56 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
MVSTBW 2,5/21-ST 12 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
Zener Voltage Regulator Diode
RES 348-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-1206 TR-7-PA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| ECHU1C332MB5 ECHU1H332MB5 ECHU1H823MB9 ECHU1H821MB |
Stacked metallized PPS film as dielectric with simple mold-less construction
Stacked matallized PPS film as dielectric with simple mold less construction
Film Chip Capacitor
|
Panasonic Semiconductor
|
| RES-20 20SERIES |
All-welded construction
All-welded construction.
|
Ohmite Mfg. Co.
|
| MM3Z18VS |
Planar Die Construction
|
TY Semiconductor Co., L...
|
| CDRH10D48AA CDRH10D48/AANP-150N CDRH10D48/AANP-102 |
Magnetically shielded construction
|
Sumida Corporation
|
